This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2023.
Company Filing History:
Years Active: 2023
Title: The Innovative Contributions of Bing-Hung Chang
Introduction
Bing-Hung Chang is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of materials science, particularly through his innovative patent related to porous substrate structures. His work is recognized for its potential applications in various industries.
Latest Patents
Bing-Hung Chang holds a patent for a "Porous substrate structure and manufacturing method thereof." This invention provides a porous substrate structure that includes a substrate, an anodic aluminum oxide layer, and a double metal oxide layer. The substrate is designed with a plurality of pores, enhancing its functionality. The anodic aluminum oxide layer is strategically disposed on the substrate, while the double metal oxide layer is placed on top of the anodic aluminum oxide layer. This innovative design offers new possibilities in material applications.
Career Highlights
Bing-Hung Chang is affiliated with the Industrial Technology Research Institute, where he continues to advance his research and development efforts. His work at this esteemed institution has allowed him to explore various innovative technologies and contribute to the scientific community.
Collaborations
Throughout his career, Bing-Hung Chang has collaborated with talented individuals such as Yen-Hsun Chi and Chun-Ju Huang. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Bing-Hung Chang's contributions to the field of materials science through his patent on porous substrate structures exemplify his innovative spirit. His work not only enhances our understanding of material properties but also paves the way for future advancements in technology.