Bin Yang

Title: The Innovative Contributions of Bin Yang

Introduction

Bin Yang is a notable inventor based in Chappaqua, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work has implications for the efficiency and effectiveness of electronic devices.

Latest Patents

Bin Yang holds a patent titled "Methods of forming silicides of different thicknesses on different structures." This patent describes a process where the gate and active regions of a device are formed through alternating steps of applying and removing nitride and oxide layers. This method allows for the exposure of silicon in different areas while keeping silicon or polysilicon covered with nitride. Metal layers are then deposited over the exposed silicon or polysilicon, and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are subsequently removed from the covered areas, and another metal layer is deposited. The anneal process is repeated, resulting in silicide of one thickness formed over the second exposed areas, with an additional thickness of silicide formed over the previous silicide thickness.

Career Highlights

Bin Yang is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work at AMD has allowed him to contribute to cutting-edge technology and innovation in the field.

Collaborations

Throughout his career, Bin Yang has collaborated with talented individuals such as Wen Yu and Paul Raymond Besser. These collaborations have further enhanced his work and contributions to the industry.

Conclusion

Bin Yang's innovative patent and contributions to semiconductor technology highlight his role as a significant inventor in the field. His work continues to influence the development of electronic devices and showcases the importance of innovation in technology.