Bridgewater, NJ, United States of America

Bin Yang

This inventor holds 2 USPTO granted patents. Top assignee: Agere Systems Inc.. Active years: 2007-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bin Yang. Retrieved from https://idiyas.com/inventor/bin-yang-c7d1ja6z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2007-2009

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2 patents (USPTO):Explore Patents

Title: The Innovations of Bin Yang

Introduction

Bin Yang is a notable inventor based in Bridgewater, NJ (US). He has made significant contributions to the field of electronics, particularly in the development of advanced field effect transistors. With a total of 2 patents to his name, Yang's work is paving the way for high power applications in modern technology.

Latest Patents

Yang's latest patents focus on III-V power field effect transistors. These transistors are specifically configured for high power applications and involve a unique method of fabrication. The design utilizes III-V materials to achieve a breakdown voltage that is advantageous for such applications. The process begins with determining the operating voltage and the desired breakdown voltage. A peak electric field is identified, which is associated with these parameters. The device is then configured to exhibit this peak electric field at the specified operating voltage. Key features of the device include an overlapping gate or field plate, along with a barrier layer over the device channel. Additionally, a p-type pocket can be formed in a region of single-crystal III-V material beneath the device channel. These innovative features control the electrical potential in the drift region, ensuring optimal performance.

Career Highlights

Yang is currently employed at Agere Systems Inc., where he continues to innovate and develop cutting-edge technologies. His work has been instrumental in advancing the capabilities of power electronics, making significant strides in efficiency and performance.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues such as Peide Ye and Jeff Devin Bude. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Bin Yang's contributions to the field of electronics, particularly through his patents on III-V power field effect transistors, highlight his innovative spirit and dedication to advancing technology. His work at Agere Systems Inc. and collaborations with other professionals further emphasize his impact in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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