Plano, TX, United States of America

Bin Xia

USPTO Granted Patents = 2 


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Bin Xia

Introduction

Bin Xia is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of semiconductor manufacturing. With a total of 2 patents, his work focuses on advanced methods for forming films on substrates.

Latest Patents

Bin Xia's latest patents include innovative methods for forming a ruthenium-based film on a substrate. These methods are crucial in semiconductor manufacturing processes. A reaction chamber and a substrate within the chamber are utilized. A ruthenium-based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided. This process results in the production of a ruthenium-containing film on the substrate.

Career Highlights

Throughout his career, Bin Xia has worked with prominent companies in the electronics sector. Notably, he has been associated with Air Liquide Electronics U.S. LP and L'Air Liquide Société Anonyme Pour L'Étude Et L'Exploitation Des Procédés Georges Claude. His expertise in semiconductor processes has made him a valuable asset in these organizations.

Collaborations

Bin Xia has collaborated with various professionals in his field. One of his notable coworkers is Ashutosh Misra. Their combined efforts have contributed to advancements in semiconductor technology.

Conclusion

Bin Xia's innovative work in semiconductor manufacturing and his contributions to the development of ruthenium-based films highlight his importance as an inventor. His patents and collaborations reflect his commitment to advancing technology in this critical field.

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