Anhui, China

Biao Zhang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hefei Core Storage Electronic Limited. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Biao Zhang. Retrieved from https://idiyas.com/inventor/biao-zhang-qns7rt1c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Biao Zhang and Memory Temperature Control

Introduction

Biao Zhang is an inventor associated with Hefei Core Storage Electronic Limited in Anhui, China. His patent work addresses temperature management in memory storage devices.

Latest Patents

The provided information lists 1 patent for Biao Zhang: “Memory Temperature Controlling Method and Memory Temperature Controlling System.” The invention uses testing to establish a linear relationship among the internal temperature of a memory control circuit unit, the internal temperatures of memory packages, and their surface temperatures. The memory device then uses current internal temperature readings to predict a memory package’s surface temperature and adjusts the operating frequency for accessing rewritable non-volatile memory based on that prediction.

Career Highlights

Zhang’s listed invention combines temperature measurement, predictive calculation, and operating-frequency adjustment. This approach is designed to help a memory storage device respond to predicted surface temperatures during operation.

Collaborations

The provided information names Weikang Wang and Hai Han as Zhang’s coworkers. No further details about their roles in the patent or their collaboration are specified.

Conclusion

Biao Zhang’s listed patent focuses on predicting memory temperatures and adjusting access frequency accordingly, reflecting his work in memory storage technology at Hefei Core Storage Electronic Limited.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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