Suzhou, China

Biao Geng

This inventor holds 1 USPTO granted patent. Top assignee: Soochow University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Biao Geng. Retrieved from https://idiyas.com/inventor/biao-geng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Biao Geng: Innovator in Quantum Dot Technology

Introduction

Biao Geng is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of quantum dot technology, particularly through his innovative research and patents. His work is recognized for its potential applications in various advanced technologies.

Latest Patents

Biao Geng holds a patent titled "Method for Growing Bimodal-Sized InAs/GaAs Quantum Dots, Quantum Dot, and Quantum Dot Composition." This patent reflects his expertise in the synthesis and application of quantum dots, which are crucial for advancements in optoelectronics and nanotechnology. He has 1 patent to his name, showcasing his innovative approach to scientific challenges.

Career Highlights

Biao Geng is affiliated with Soochow University, where he engages in cutting-edge research and development. His academic background and ongoing projects contribute to the university's reputation as a leading institution in scientific research. His work not only enhances the understanding of quantum dots but also paves the way for future innovations in the field.

Collaborations

Biao Geng collaborates with fellow researcher Zhenwu Shi, further enriching his research endeavors. Their combined expertise fosters a dynamic research environment that encourages innovation and discovery.

Conclusion

Biao Geng is a notable inventor whose work in quantum dot technology exemplifies the spirit of innovation. His contributions to the field are significant, and his ongoing research promises to lead to further advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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