Vellore, India

Bhuvan R Nandagopal


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Bhuvan R Nandagopal: Innovator in Memory Structure Technology

Introduction

Bhuvan R Nandagopal is a notable inventor based in Vellore, India. He has made significant contributions to the field of memory structures, particularly with his innovative approach to capacitive coupling in read and write operations. His work is recognized for enhancing the efficiency and performance of memory systems.

Latest Patents

Nandagopal holds a patent for a memory structure with self-adjusting capacitive coupling-based read and write assist. This invention discloses a memory structure that includes wordlines (WL) and cell supply lines (CSL) positioned between and parallel to voltage boost lines (VBLs). The VBLs enable capacitive coupling-based voltage boosting of the adjacent WL and/or CSL depending on whether a read or write assist is required. During a read operation, all VBLs for a selected row can be charged to create coupling capacitances with the WL and with the CSL, thereby boosting both the wordline voltage (Vwl) and the cell supply voltage (Vcs) for a read assist. During a write operation, one VBL adjacent to the WL for a selected row can be charged to create a coupling capacitance with the WL only, thereby boosting the Vwl for a write assist. The coupling capacitances created by charging VBLs in the structure are self-adjusting, meaning that as the length of the rows increases, so do the potential coupling capacitances.

Career Highlights

Bhuvan R Nandagopal is currently associated with Globalfoundries U.S. Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory structures, making them more efficient and effective for various applications.

Collaborations

Nandagopal has collaborated with talented individuals such as Vivek Raj and Shivraj Gurpadappa Dharne. These collaborations have contributed to the development of cutting-edge technologies in the memory sector.

Conclusion

Bhuvan R Nandagopal is a distinguished inventor whose work in memory structure technology has made a significant impact. His innovative patent demonstrates a forward-thinking approach to enhancing memory performance, showcasing his expertise and dedication to the field.

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