Bernhardt F Cordts, Iii

Title: Innovations by Bernhardt F Cordts, III

Introduction

Bernhardt F Cordts, III is a notable inventor based in Ipswich, MA (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to creating high-quality semiconductor-on-insulator structures.

Latest Patents

His latest patents focus on an implantation process using sub-stoichiometric oxygen doses at different energies. This invention provides a method for creating high-quality silicon-on-insulator structures through sequential steps of ion implantation and high-temperature annealing. The resulting structures feature a top silicon layer with a thickness ranging from 10-250 nm and a buried oxide layer with a thickness of 30-300 nm. The buried oxide layer exhibits a breakdown field greater than 5 MV/cm, and the density of silicon inclusions in the BOX region is less than 2×10 cm. This process can be utilized to create an entire SOI wafer or to develop patterned SOI regions integrated with non-SOI regions.

Career Highlights

Bernhardt is currently associated with Ibis Technology Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the quality and efficiency of semiconductor structures.

Collaborations

He has collaborated with notable coworkers, including Robert Dolan and Maria J Anc, contributing to a dynamic and innovative work environment.

Conclusion

Bernhardt F Cordts, III is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative patents reflect his commitment to excellence and his contributions to the industry will have lasting impacts.