Greiling, Germany

Bernhard Knüpfer

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2004.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Bernhard Knüpfer: Innovator in Semiconductor Memory Technology

Introduction

Bernhard Knüpfer is a notable inventor based in Greiling, Germany. He has made significant contributions to the field of semiconductor memory technology. His innovative work has led to the development of a unique patent that addresses critical aspects of data signal processing.

Latest Patents

One of Bernhard Knüpfer's key patents is focused on a semiconductor memory with a signal path. This invention includes a data signal path and a control device designed to supply functional elements of the data signal path with control signals. The patent introduces programmable delays connected into the signal lines that provide the control signals. This allows for the time relationships between the control signals to be set reversibly via a soft set register or irreversibly via fuses. This innovation enables simple adaptation of the internal control signal timing to fluctuations in the fabrication process or after conversion of the configuration to a new fabrication process.

Career Highlights

Bernhard Knüpfer is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to contribute to advancements in memory technology, enhancing the performance and reliability of semiconductor devices.

Collaborations

One of his notable coworkers is Dirk Hottgenroth. Their collaboration has likely fostered innovative ideas and solutions within the semiconductor field.

Conclusion

Bernhard Knüpfer's contributions to semiconductor memory technology exemplify the impact of innovation in the electronics industry. His patent reflects a deep understanding of the challenges in semiconductor fabrication and offers practical solutions for improving memory performance.

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