This inventor holds 1 USPTO granted patent. Top assignee: Ihp Gmbh—innovations for High Performance Microelectronics/leibniz-Instituit Fur Innovative Mikroelektronik. Active years: 2010.
Company Filing History:
Years Active: 2010
Title: Bernd Heinenman: Innovator in Semiconductor Technology
Introduction
Bernd Heinenman is a notable inventor based in Frankfurt, Germany. He is recognized for his contributions to the field of semiconductor technology, particularly in the development of bipolar complementary semiconductor devices. His innovative work has led to advancements that enhance the performance of microelectronics.
Latest Patents
Heinenman holds a patent for a bipolar complementary semiconductor device. This device features a substrate of a first conductivity type and includes several active regions. These regions are defined laterally by shallow field insulation regions. The design incorporates vertical npn-bipolar transistors with an epitaxial base in some active regions, while vertical pnp-bipolar transistors with an epitaxial base are arranged in others. To improve high-frequency properties, an insulation doping region is strategically placed between the collector region and the substrate.
Career Highlights
Heinenman is affiliated with IHP GmbH, which focuses on innovations for high-performance microelectronics. His work at this institution has been pivotal in advancing semiconductor technologies. He has a total of 1 patent to his name, showcasing his expertise and commitment to innovation in this field.
Collaborations
Heinenman collaborates with esteemed colleagues such as Steffen Marschmayer and Holger Rücker. Their combined efforts contribute to the ongoing research and development in semiconductor technology.
Conclusion
Bernd Heinenman is a significant figure in the realm of semiconductor innovation. His contributions, particularly in bipolar complementary semiconductor devices, reflect his dedication to advancing technology. His work continues to influence the field of microelectronics.