Macgregor, Australia

Benjamin Vaughan Cunning


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Benjamin Vaughan Cunning

Introduction

Benjamin Vaughan Cunning, an accomplished inventor based in Macgregor, Australia, has made a significant contribution to the field of material science. His expertise lies particularly in the fabrication of advanced materials, specifically graphene, which is known for its remarkable electrical, thermal, and mechanical properties.

Latest Patents

Cunning holds a groundbreaking patent titled "Process for forming graphene layers on silicon carbide." This patent describes a novel method which includes depositing at least a first and a second metal onto a surface of silicon carbide (SiC) and heating these under specific conditions. The process facilitates the reaction of the first metal with the silicon in SiC, leading to the formation of carbon and a stable silicide. This innovative approach ensures that the solubilities of carbon in the stable silicide and the second metal are low enough, allowing the carbon produced to form a graphene layer on the SiC surface efficiently.

Career Highlights

Currently, Benjamin Cunning is associated with Griffith University, where he actively participates in research and development to advance the field of materials. His work not only enhances the understanding of graphene formation but also opens up new avenues for applications in electronics and nanotechnology, inspiring future innovations in material science.

Collaborations

Throughout his career, Cunning has worked alongside notable colleagues, including Francesca Iacopi and Mohsin Ahmed. Their collaborative efforts have led to significant advancements in the fabrication techniques of materials, particularly in the utilization of silicon carbide for graphene production.

Conclusion

Benjamin Vaughan Cunning's contributions to the realm of innovation and material science are noteworthy. His patented process for forming graphene layers on silicon carbide is a testament to his ingenuity and expertise. As he continues his research at Griffith University, the scientific community eagerly anticipates his future contributions to advancements in technology and materials.

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