The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Sep. 08, 2014
Applicant:
Griffith University, Nathan, Queensland, AU;
Inventors:
Assignee:
GRIFFITH UNIVERSITY, Nathan, Queensland, AU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C30B 1/02 (2006.01); C30B 1/10 (2006.01); C30B 29/02 (2006.01); C01B 31/04 (2006.01); B81C 1/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 1/026 (2013.01); B81C 1/0038 (2013.01); C01B 31/0446 (2013.01); C01B 31/0461 (2013.01); C30B 1/10 (2013.01); C30B 29/02 (2013.01); H01L 21/00 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02491 (2013.01); H01L 21/02527 (2013.01); H01L 21/02614 (2013.01); B81C 2201/0197 (2013.01);
Abstract
A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.