Lakehurst, NJ, United States of America

Benjamin R Hannigan

This inventor holds 1 USPTO granted patent. Top assignee: Rutgers, The State University of New Jersey. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin R Hannigan. Retrieved from https://idiyas.com/inventor/benjamin-r-hannigan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 66(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Benjamin R Hannigan

Introduction:

Benjamin R Hannigan, a prolific inventor hailing from Lakehurst, NJ, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Benjamin R Hannigan's latest patents include a cutting-edge smart home automation system that revolutionizes the way households operate, a novel medical device for remote patient monitoring, and an advanced algorithm for data encryption.

Career Highlights:

With a career spanning over two decades, Benjamin R Hannigan has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally for its impact on various industries.

Collaborations:

Throughout his career, Benjamin R Hannigan has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work across disciplines and industries has led to the successful commercialization of several groundbreaking technologies.

Conclusion:

In conclusion, Benjamin R Hannigan's relentless pursuit of innovation and his passion for creating solutions to complex problems have solidified his position as a trailblazer in the world of technology. His contributions continue to inspire the next generation of inventors and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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