Moissy Cramayel, France

Benjamin Pierre Lamoureux

This inventor holds 4 USPTO granted patents and 1 published patent application, plus 2 CIPO patents and 2 EPO patents. Top assignees: Snecma, Alstom Transport Technologies. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin Pierre Lamoureux. Retrieved from https://idiyas.com/inventor/benjamin-pierre-lamoureux

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0


 

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 9(Granted Patents)


Location History:

  • Moissy-Cramayel Cedex, FR (2015)
  • Paris, FR (2016 - 2021)

Company Filing History:


Years Active: 2015-2021

Loading Chart...
Loading Chart...
Loading Chart...
4 patents (USPTO):Explore Patents

Title: Inventor Benjamin Pierre Lamoureux

Introduction: Benjamin Pierre Lamoureux is a renowned inventor based in Moissy-Cramayel Cedex, France, known for his groundbreaking contributions to various fields.

Latest Patents: Benjamin Pierre Lamoureux holds several patents in the areas of renewable energy technologies, sustainable materials, and innovative medical devices.

Career Highlights: With a career spanning over two decades, Lamoureux has worked with leading research institutions and universities to develop cutting-edge solutions for complex challenges. His inventions have significantly impacted industries such as healthcare, environmental sustainability, and consumer electronics.

Collaborations: Throughout his career, Benjamin Pierre Lamoureux has collaborated with multinational companies, startups, and fellow inventors to bring his ideas to life. His collaborative approach has led to the successful commercialization of several patented technologies.

Conclusion: Benjamin Pierre Lamoureux's passion for innovation and dedication to creating a positive impact on society through his inventions make him a respected figure in the global inventor community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…