Seattle, WA, United States of America

Benjamin James Chapman

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Microsoft Technology Licensing, LLC. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Benjamin James Chapman

Introduction

Benjamin James Chapman is an accomplished inventor based in Seattle, WA. He has made significant contributions to the field of quantum capacitance through his innovative patent. His work is particularly relevant in the context of radio frequency measurements and their applications in quantum devices.

Latest Patents

Chapman holds a patent titled "Systems and methods for converting the result of a radio frequency (RF) measurement into the quantum capacitance of a device." This patent describes methods for extracting frequency shift and resonator loss shift of a resonator that is coupled to a quantum device. The method allows for the derivation of both the real and imaginary parts of quantum capacitance without the need for resonator fitting.

Career Highlights

Benjamin James Chapman is currently employed at Microsoft Technology Licensing, LLC. His role involves leveraging his expertise in quantum capacitance to advance the company's technological capabilities. He has been recognized for his innovative approach and dedication to research and development.

Collaborations

Chapman has collaborated with notable colleagues, including Tareq El Dandachi and Samantha Ho. These collaborations have further enriched his work and contributed to the advancement of their shared projects.

Conclusion

Benjamin James Chapman is a prominent figure in the field of quantum capacitance, with a valuable patent that showcases his innovative thinking. His contributions at Microsoft Technology Licensing, LLC, along with his collaborations, highlight his commitment to advancing technology in this exciting area.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…