Bellbrook, OH, United States of America

Benjamin C MacMurray

This inventor holds 2 USPTO granted patents. Top assignee: Cornerstone Research Group, Inc.. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin C MacMurray. Retrieved from https://idiyas.com/inventor/benjamin-c-macmurray-qx8l7chg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: The Innovations of Benjamin C. MacMurray

Introduction

Benjamin C. MacMurray is an accomplished inventor based in Bellbrook, OH (US). He has made significant contributions to the field of fluid absorption and distribution systems. With a total of 2 patents to his name, MacMurray continues to push the boundaries of innovation.

Latest Patents

MacMurray's latest patents focus on fluid absorption and distribution enhancement systems. These embodiments of a fluid absorption and distribution enhancement (FADE) product comprise at least one flow media layer and at least one superabsorbent polymer layer. His work in this area demonstrates a commitment to improving fluid management technologies.

Career Highlights

MacMurray is currently associated with Cornerstone Research Group, Inc., where he applies his expertise to develop innovative solutions. His career reflects a dedication to advancing technology in fluid absorption systems.

Collaborations

Some of his notable coworkers include Matthew Brian Sunday and Joseph H. Althaus. Their collaborative efforts contribute to the success of the projects they undertake together.

Conclusion

Benjamin C. MacMurray is a notable inventor whose work in fluid absorption and distribution systems showcases his innovative spirit. His contributions continue to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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