Middletown, NJ, United States of America

Ben H McMillan, Jr

This inventor holds 1 USPTO granted patent. Top assignee: Eccs, Inc.. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ben H McMillan, Jr. Retrieved from https://idiyas.com/inventor/ben-h-mcmillan-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 1997

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Ben H McMillan, Jr

Introduction:

Ben H McMillan, Jr, a distinguished inventor hailing from Middletown, NJ (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Ben H McMillan, Jr's latest patents showcase his commitment to innovation and technological advancement. His recent inventions have focused on improving efficiency in renewable energy systems and enhancing cybersecurity measures in digital platforms.

Career Highlights:

Throughout his illustrious career, Ben H McMillan, Jr has been at the forefront of technological innovation. His work has revolutionized various industries, including telecommunications, healthcare, and sustainable energy. With a keen eye for detail and a passion for problem-solving, he has consistently pushed the boundaries of what is possible in the world of invention.

Collaborations:

Ben H McMillan, Jr has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have been instrumental in turning his visionary ideas into tangible products that have had a lasting impact on society.

Conclusion:

In conclusion, Ben H McMillan, Jr's dedication to innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor. His work continues to inspire future generations of inventors to push the limits of what technology can achieve.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…