Company Filing History:
Years Active: 1988-1993
Title: The Innovations of Ben G Yacobi
Introduction
Ben G Yacobi is a notable inventor based in Natick, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development of heteroepitaxial semiconductor structures, which are crucial for various electronic applications.
Latest Patents
Yacobi's latest patents include a method of manufacturing a heteroepitaxial semiconductor structure. This innovation involves the epitaxial growth of GaAs on substrates such as InP or Si. The GaAs is formed into individual spaced-apart islands, each having maximum dimensions in the plane of the substrate surface of no greater than 10 micrometers. This design minimizes stress in the epitaxially grown layers, which is essential due to the mismatch of thermal expansion coefficients between the substrate and the materials used.
Career Highlights
Ben G Yacobi has been associated with GTE Laboratories Incorporated, where he has contributed to various research and development projects. His expertise in semiconductor structures has positioned him as a key figure in advancing technology in this area.
Collaborations
Yacobi has worked alongside notable colleagues such as Stanley A Zemon and Chirravuri Jagannath. Their collaborative efforts have further enhanced the innovations in semiconductor technology.
Conclusion
Ben G Yacobi's contributions to the field of semiconductor technology through his patents and collaborations highlight his importance as an inventor. His work continues to influence advancements in electronic materials and structures.