Ben G Streetman

Title: Ben G. Streetman: Innovator in Semiconductor Technology

Introduction

Ben G. Streetman is a prominent inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has advanced the understanding and application of modulation doped field effect transistors and sublimating devices.

Latest Patents

One of his latest patents is for a modulation doped field effect transistor (MODFET) that features a built-in drift field. This innovative device includes highly doped source and drain regions separated by an undoped semiconductor alloy. The mole fraction of the alloy is graded between the source and drain, creating a conduction band discontinuity at the heterojunction. This design allows for high energy carrier injection into the channel, enhancing carrier drift velocity and reducing transit time. Another notable patent is for a sublimating and cracking apparatus, which produces a collimated beam of molecules from a solid source. This device consists of an elongated sublimating tube and a cracking tube that are axially oriented to each other, providing a unique method for molecular production.

Career Highlights

Ben G. Streetman is affiliated with the University of Texas System, where he has contributed to various research initiatives. His work has been instrumental in pushing the boundaries of semiconductor technology, particularly in the development of advanced devices that leverage unique material properties.

Collaborations

Throughout his career, Streetman has collaborated with notable colleagues, including Terry J. Mattord and Aloysious F. Tasch, Jr. These partnerships have fostered innovation and have led to significant advancements in their respective fields.

Conclusion

Ben G. Streetman is a distinguished inventor whose work in semiconductor technology has had a lasting impact. His patents reflect a commitment to innovation and a deep understanding of complex materials and devices.