Wehl, Netherlands

Ben F M Vonk

This inventor holds 2 USPTO granted patents. Top assignee: Medtronic, Inc.. Active years: 2003-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ben F M Vonk. Retrieved from https://idiyas.com/inventor/ben-f-m-vonk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 119(Granted Patents)


Company Filing History:


Years Active: 2003-2012

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2 patents (USPTO):Explore Patents

Title: Innovations by Ben F M Vonk

Introduction

Ben F M Vonk is a notable inventor based in Wehl, Netherlands. He has made significant contributions to the field of medical technology, particularly in the development of pulse generation techniques and atrial capture detection methods. With a total of two patents to his name, Vonk's work has the potential to enhance the functionality of implantable medical devices.

Latest Patents

Vonk's latest patents include "Pulse generation techniques for implantable pulse generator systems." This invention focuses on tri-phasic pulse generation techniques that utilize a pre-stimulus phase, a stimulus phase, and a post-stimulus phase within a pulse generation cycle. During the pre-stimulus phase, an output capacitor is charged to a desired voltage level. The capacitor is then discharged during the stimulus phase, and recharging begins again in the post-stimulus phase. Notably, the charging of the output capacitor can be terminated during the post-stimulus phase once a measured voltage in the patient meets or exceeds a specified threshold.

Another significant patent is the "Method and system for atrial capture detection based on far-field R-wave sensing." This method provides a way to detect atrial capture by establishing stable far-field R-wave (FFRW) sensing. After confirming the presence of stable FFRW sensing, atrial capture can be detected by monitoring the FFRW in a predetermined detection window following an atr

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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