This inventor holds 4 USPTO granted patents. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 1997-2000.
Company Filing History:
Years Active: 1997-2000
Title: Beatrice Biasse: Innovator in Semiconductor Technology
Introduction
Beatrice Biasse is a prominent inventor based in Uriage, France. She has made significant contributions to the field of semiconductor technology, holding a total of four patents. Her innovative work focuses on methods for obtaining thin films of semiconductor materials, which are crucial for various applications in electronics.
Latest Patents
One of her latest patents is a method of obtaining a thin film of semiconductor material. This method involves creating a thin film from a substrate made of semiconductor material, which includes at least one element on one face of the substrate made from a different material. The process utilizes ion implantation to produce gaseous microbubbles within the substrate, leading to a heterogeneous structure. Another notable patent describes a process for transferring a thin film from an initial substrate onto a final substrate, which includes stages such as joining the thin film onto a handle substrate and cleavage of the handle substrate following a cleavage zone formed by micro-bubbles.
Career Highlights
Beatrice Biasse works at the Commissariat à l'Énergie Atomique, where she has been instrumental in advancing semiconductor technologies. Her research has significant implications for the fabrication of three-dimensional structures in integrated circuits, showcasing her expertise and innovative spirit in the field.
Collaborations
Throughout her career, Beatrice has collaborated with notable colleagues, including Michel Bruel and Bernard Aspar. These partnerships have further enriched her research and contributed to her success as an inventor.
Conclusion
Beatrice Biasse stands out as a leading figure in semiconductor innovation, with her patents reflecting her commitment to advancing technology. Her work continues to influence the field and inspire future developments in semiconductor materials.