Commissariat a L'energie Atomique

Beatrice Biasse

Michel Bruel

Bernard Aspar

Marc Zussy

Florent Pigeon

A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method includes implantation by bombardment of the face of said substrate and said element by ions to produce gaseous microbubbles within the volume of the substrate, and to produce a continuous zone of microbubbles within said element to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor diffusion, and; a separation of the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure, whereby the region of small thickness constitutes a thin film.

Method of obtaining a thin film of semiconductor material

A thin film is transferred from an initial substrate onto a final substrate. The process includes the following successive stages: joining of the thin film (112) onto a handle substrate (120) comprising a cleavage zone, elimination of the initial substrate, joining of the thin film (112) with a final substrate (132), and cleavage of the handle substrate (120) following the cleavage zone. The cleavage zone includes a film of micro-bubbles formed by ion implantation. The invention has, in particular, applications in the fabrication of three-dimensional structures of integrated circuits.

Process for transferring a thin film from an initial substrate onto a

A substrate for integrated components including a support structure and a thin non-conductive film. An intermediate film is placed between the support structure and the thin non-conductive film. The intermediate film is a sacrificial film which may be removed chemically. By doing so, the thin non-conductive film may be liberated from the support structure. The intermediate film is traversed by channels which carry the chemicals for removing the sacrificial film. The channels may form a grid on the surface of the intermediate film.

Substrate for integrated components comprising a thin film and an

The process for the preparation of a waveguide buried in a glass substrate according to the invention consists of the following stages:

Growing community of inventors

Uriage, France

Beatrice Biasse