Mettmenstetten, Switzerland

Beat Furrer

This inventor holds 1 USPTO granted patent. Top assignee: Lgz Landis Gyr Zug Ag. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Beat Furrer. Retrieved from https://idiyas.com/inventor/beat-furrer-7c9ltpm2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 87(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Beat Furrer: Innovator in Magnetic Field Sensor Technology

Introduction

Beat Furrer is a notable inventor based in Mettmenstetten, Switzerland. He has made significant contributions to the field of semiconductor technology, particularly in enhancing the stability of magnetic field sensors.

Latest Patents

Furrer holds a patent for an "Arrangement for improving the longterm stability of a Hall element." This innovative arrangement addresses the negative influences of small variations in charge-carrier concentration within semiconductor materials. The patent outlines a system that includes a magnetic field sensor, a voltage/current converter, and an amplifier designed to maintain stability in sensor output despite fluctuations in charge-carrier concentration.

Career Highlights

Furrer is associated with Lgz Landis & Gyr Zug AG, where he applies his expertise in semiconductor technology. His work focuses on developing solutions that enhance the performance and reliability of magnetic field sensors.

Collaborations

Furrer collaborates with notable colleagues such as Beat Halg and Jacob De Vries, contributing to advancements in their shared field of expertise.

Conclusion

Beat Furrer is a distinguished inventor whose work in improving the stability of Hall elements has made a significant impact in the field of semiconductor technology. His innovative solutions continue to influence the development of reliable magnetic field sensors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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