Radnor, PA, United States of America

Baruch Ben Dor

This inventor holds 5 USPTO granted patents. Top assignees: Infrascan, Inc., Drexel University. Active years: 2011-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Baruch Ben Dor. Retrieved from https://idiyas.com/inventor/baruch-ben-dor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Bryn Mawr, PA (US) (2011)
  • Radnor, PA (US) (2019 - 2023)

Company Filing History:


Years Active: 2011-2023

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5 patents (USPTO):Explore Patents

Title: The Innovative Mind of Baruch Ben Dor

Introduction:

Baruch Ben Dor, a talented inventor based in Radnor, PA, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Baruch Ben Dor's latest patents showcase his forward-thinking approach to problem-solving and his commitment to pushing the boundaries of what is possible in the tech industry.

Career Highlights:

Throughout his illustrious career, Baruch Ben Dor has consistently demonstrated a knack for developing cutting-edge solutions that have revolutionized the way we interact with technology. His innovative spirit and dedication to excellence have earned him a reputation as a trailblazer in the field.

Collaborations:

Baruch Ben Dor has collaborated with some of the brightest minds in the industry, pooling their collective expertise to create groundbreaking inventions that have had a lasting impact on the tech world. His ability to work effectively in a team setting has been instrumental in the success of many of his projects.

Conclusion:

In conclusion, Baruch Ben Dor's passion for innovation and his relentless pursuit of excellence have solidified his position as a leading figure in the world of technology. His contributions have not only shaped the industry but have also inspired future generations of inventors to think outside the box and push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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