Location History:
- Westboro, MA (US) (1987 - 1997)
- Westborough, MA (US) (2011)
Company Filing History:
Years Active: 1987-2011
Title: Barry J Liles: Innovator in Semiconductor Technology
Introduction
Barry J Liles is a prominent inventor based in Westborough, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on methods and structures that enhance the reliability and performance of semiconductor devices.
Latest Patents
Among his latest patents, one notable invention is a method and structure for reducing cracks in a dielectric layer in contact with metal. This innovation involves a metal structure comprising multiple layers, where the dielectric layer is strategically placed to minimize cracking. Another significant patent describes a semiconductor structure that includes a first and second electrode, connected by a bridging conductor made of different metal layers. This design effectively prevents restructuring due to mechanical stresses, enhancing the durability of semiconductor devices.
Career Highlights
Barry J Liles is currently employed at Raytheon Company, where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have made him a valuable asset to the company and the industry as a whole.
Collaborations
Throughout his career, Barry has collaborated with notable colleagues, including Mark S Durschlag and James G Oakes. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.
Conclusion
Barry J Liles exemplifies the spirit of innovation in semiconductor technology. His contributions through patents and collaborations have significantly impacted the industry, showcasing his dedication to advancing technology.