Barry Hogan

Title: Barry Hogan: Innovator in Semiconductor Technology

Introduction

Barry Hogan is a notable inventor based in Santa Clara, CA, specializing in semiconductor technology. He has made significant contributions to the field, holding 2 patents that focus on improving barrier layer structures in semiconductor devices. His work is crucial for enhancing the performance and reliability of electronic components.

Latest Patents

Hogan's latest patents include a barrier layer structure that prevents the migration of silicon within semiconductor devices. This innovative structure is formed from a refractory metal compound, such as a refractory metal nitride. The design features at least two adjacent layers of the same chemical composition, with an interfacial region that is at least 10 .ANG. thick. This configuration effectively blocks the migration of mobile atoms, ensuring the integrity of the semiconductor device. Additionally, he has developed a method for forming a barrier layer that maintains a consistently high aluminum <111> or copper <111> crystal orientation content during the processing of semiconductor substrates. This method is essential for achieving stable performance across multiple devices.

Career Highlights

Barry Hogan is currently employed at Applied Materials, Inc., a leading company in the semiconductor manufacturing industry. His work at Applied Materials has positioned him as a key player in advancing semiconductor technology.

Collaborations

Hogan has collaborated with notable colleagues, including Kenny King-tai Ngan and Seshadri Ramaswami, to further enhance the innovations in semiconductor technology.

Conclusion

Barry Hogan's contributions to semiconductor technology through his patents and work at Applied Materials, Inc. highlight his role as an influential inventor in the field. His innovative approaches to barrier layer structures are paving the way for advancements in electronic devices.