Haifa, Israel

Barak Hoffer

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Technion Research & Development Foundation Ltd. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Barak Hoffer: Innovator in Phase Change Memory Technology

Introduction

Barak Hoffer is a notable inventor based in Haifa, Israel. He has made significant contributions to the field of electronic memory technology. His work focuses on enhancing data processing capabilities through innovative memory solutions.

Latest Patents

Hoffer holds a patent for "Logic gates and stateful logic using phase change memory." This invention involves an electronic memory block that comprises phase change memory cells for memory storage. Additionally, it includes further phase change memory cells that form logic gates, enabling in-memory data processing. This advancement represents a significant step forward in the efficiency of electronic memory systems.

Career Highlights

Barak Hoffer is associated with the Technion Research & Development Foundation Ltd. His role at this esteemed institution allows him to engage in cutting-edge research and development in the field of memory technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Hoffer has collaborated with notable colleagues, including Shahar Kvatinsky and Eilam Yalon. These partnerships have contributed to the advancement of research in phase change memory and its applications.

Conclusion

Barak Hoffer's innovative work in phase change memory technology positions him as a key figure in the field of electronic memory solutions. His contributions are paving the way for future advancements in data processing technologies.

Profile summary based on public USPTO records.
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