Ramat Hakovesh, Israel

Barak Cherches

This inventor holds 19 USPTO granted patents and 12 published patent applications and 1 EPO patent, primarily in Network Security. Top assignee: Texas Instruments Corporation. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Barak Cherches. Retrieved from https://idiyas.com/inventor/barak-cherches

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 94.7

 

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Ramat Hakovesh, IL (2016 - 2024)
  • Ramat Ha'Kovesh, IL (2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Network Reconnect
Secure Communications
Memory Allocation
Data Integrity
Fault Injection
Authentication Techniques
Wireless Security
Resource Coordination
Instruction Bus Monitoring
Session Management
Device Provisioning
19 patents (USPTO):Explore Patents

Title: Inventor Barak Cherches: Pioneering Innovations in Ramat Hakovesh

Introduction: Barak Cherches is a visionary inventor based in Ramat Hakovesh, Israel, known for his groundbreaking contributions to various technological fields.

Latest Patents: Barak Cherches holds several patents in the areas of renewable energy technologies, artificial intelligence systems, and sustainable agriculture practices.

Career Highlights: With a career spanning over two decades, Barak Cherches has worked with leading research institutions and universities to develop cutting-edge solutions for complex challenges.

Collaborations: Throughout his career, Barak Cherches has collaborated with multinational companies, innovative startups, and renowned experts in the industry to bring his inventions to life.

Conclusion: Barak Cherches continues to inspire the next generation of inventors with his passion for pushing the boundaries of innovation and creating a positive impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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