Poughkeepsie, NY, United States of America

Bao-Tai Hwang

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1986-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bao-Tai Hwang. Retrieved from https://idiyas.com/inventor/bao-tai-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 95(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (1986)
  • Pougkeepsie, NY (US) (1987)

Company Filing History:


Years Active: 1986-1987

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2 patents (USPTO):Explore Patents

Title: Innovations by Bao-Tai Hwang

Introduction

Bao-Tai Hwang is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work primarily focuses on improving etching processes for silicon materials, which are crucial in the manufacturing of electronic devices.

Latest Patents

Hwang's latest patents include a method for preferential chemical etching of doped silicon. This invention provides an improved etchant composition that allows for resistivity-specific etching of doped silicon films. The etchant composition consists of 0.2-6 mole % hydrofluoric acid, 14-28 mole % nitric acid, and 66-86 mole % acetic acid/water. This innovative etchant leaves no silicon residue and enables controlled etching with an etch stop at the lightly doped or intrinsic region.

Another significant patent by Hwang is a method of forming recessed oxide isolation with reduced steepness of the bird's neck in a monocrystalline silicon body. This method involves creating a layered structure of silicon dioxide, polycrystalline silicon, and silicon nitride, which is then patterned to form openings for oxide isolation. The process includes anisotropic reactive ion etching and chemical etching to achieve the desired trench depth and wall structure.

Career Highlights

Bao-Tai Hwang is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His work has contributed to advancements in the manufacturing processes used in the electronics industry.

Collaborations

Hwang has collaborated with notable coworkers such as Rosemary Christie and San-Mei Ku. Their combined expertise has further enhanced the research and development efforts within their projects.

Conclusion

Bao-Tai Hwang's contributions to semiconductor technology through his innovative patents demonstrate his significant impact on the industry. His work continues to influence the development of more efficient manufacturing processes for electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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