Bansang W Lee

Title: Bansang W Lee: Innovator in Semiconductor Technology

Introduction

Bansang W Lee is a notable inventor based in Piscataway, NJ (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to advancements in the conductivity of semiconductor devices.

Latest Patents

Bansang W Lee holds a patent for a method of making a semiconductor device to improve conductivity. This patent describes a process where a film of non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate. The film is then doped, particularly by ion implantation, to enhance its conductivity. A key aspect of this method is the pre-annealing of the film at a temperature range of 1000°C to 1200°C in an inert ambient before doping, which significantly increases the film's conductivity.

Career Highlights

Bansang W Lee has had a distinguished career, working at RCA Inc., where he has been able to apply his expertise in semiconductor technology. His work has been instrumental in developing methods that enhance the performance of semiconductor devices.

Collaborations

Throughout his career, Bansang has collaborated with esteemed colleagues, including George L Schnable and Chung P Wu. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Bansang W Lee's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to improving device performance. His work continues to influence the field and inspire future innovations.