Uriage, France

Béatrice Biasse

This inventor holds 1 USPTO granted patent. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Béatrice Biasse. Retrieved from https://idiyas.com/inventor/bandeacuteatrice-biasse

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: The Innovations of Béatrice Biasse

Introduction

Béatrice Biasse is a notable inventor based in Uriage, France. He has made significant contributions to the field of technology, particularly in the manufacturing of electronic components. His work has been recognized for its innovative approach and practical applications.

Latest Patents

Béatrice Biasse holds a patent for a "Process for the manufacture of passive and active components on the same insulating substrate." This patent showcases his expertise in integrating different types of electronic components, which is crucial for advancing modern technology.

Career Highlights

Béatrice Biasse is associated with the Commissariat à l'Énergie Atomique, a prominent research institution in France. His role there has allowed him to work on cutting-edge projects that push the boundaries of electronic manufacturing.

Collaborations

Throughout his career, Béatrice has collaborated with esteemed colleagues such as Jean-Pierre Joly and Bernard Aspar. These partnerships have fostered a creative environment that has led to innovative solutions in their field.

Conclusion

Béatrice Biasse's contributions to the field of electronics through his patent and collaborations highlight his importance as an inventor. His work continues to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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