Company Filing History:
Years Active: 2015
Title: Babak Nasr: Innovator in Electrochemical Transistor Technology
Introduction
Babak Nasr is a prominent inventor based in Eggenstein-Leopoldshafen, Germany. He has made significant contributions to the field of electrochemical devices, particularly through his innovative work on field-effect transistors.
Latest Patents
One of Babak Nasr's notable patents is for an electrochemically-gated field-effect transistor. This invention includes a source electrode, a drain electrode, a gate electrode, a transistor channel, and an electrolyte. The transistor channel is strategically located between the source and drain electrodes. The electrolyte completely covers the transistor channel and features a one-dimensional nanostructure, utilizing a solid polymer-based electrolyte.
Career Highlights
Babak Nasr is affiliated with the Karlsruher Institut für Technologie, where he continues to advance research in electrochemical technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Throughout his career, Babak has collaborated with esteemed colleagues, including Subho Dasgupta and Horst Hahn. These partnerships have further enriched his research and development efforts.
Conclusion
Babak Nasr's contributions to the field of electrochemical transistors highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of new electronic devices and applications.