The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Apr. 24, 2013
Applicant:
Karlsruher Institut Fuer Technologie, Karlsruhe, DE;
Inventors:
Subho Dasgupta, Eggenstein-Leopoldshafen, DE;
Horst Hahn, Seeheim-Jugenheim, DE;
Babak Nasr, Eggenstein-Leopoldshafen, DE;
Assignee:
Karlsruhe Institute of Technology, Karlsruhe, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); G01N 27/414 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0562 (2013.01); G01N 27/4146 (2013.01); H01L 51/0558 (2013.01); H01L 29/0669 (2013.01); H01L 29/0665 (2013.01);
Abstract
An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.