Dresden, Germany

Ayse Sünbül

This inventor holds 1 USPTO granted patent. Top assignee: Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ayse Sünbül. Retrieved from https://idiyas.com/inventor/ayse-sünbül

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ayse Sünbül and Ferroelectric Switching Innovation.

Introduction

Ayse Sünbül is an inventor based in Dresden, Germany, whose patent work addresses the performance and reliability of ferroelectric and antiferroelectric structural elements. She is associated with Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Latest Patents

Sünbül is named on one patent: “Structural Element with Improved Ferroelectric Polarisation Switching and Reliability and Method for Producing Said Structural Element.” The invention describes a ferroelectric or antiferroelectric layer formed on a substrate and doped with a first dopant and at least one additional dopant. The layer may be based on hafnium oxide or zirconium oxide, with dopants including hafnium or zirconium and materials such as aluminum, silicon, lanthanum, yttrium, gadolinium, or strontium. The approach is intended to improve polarization switching and reliability.

Career Highlights

The patent reflects Sünbül’s contribution to materials and device research focused on ferroelectric and antiferroelectric layers. Her listed portfolio includes 1 patent.

Collaborations

Sünbül’s named coworkers include David Lehninger and Maximilian Lederer. Her work is associated with Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., a research organization supporting applied science and technology.

Conclusion

Ayse Sünbül’s patent highlights a materials-engineering approach to improving ferroelectric polarization switching and reliability, contributing to research on advanced electronic structural elements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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