Chatillon le Duc, France

Ausrine Bartasyte

This inventor holds 1 USPTO granted patent. Top assignee: Université De Franche Comte. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ausrine Bartasyte. Retrieved from https://idiyas.com/inventor/ausrine-bartasyte-ct1vxxhk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ausrine Bartasyte: Ferroelectric Materials and Layered Solid-State Devices.

Introduction

Ausrine Bartasyte is an inventor based in Chatillon-le-Duc, France. Her patent work concerns layered solid-state materials with potential applications in electronic and optical devices.

Latest Patents

Bartasyte is associated with 1 patent: “Layered Solid State Element Comprising a Ferroelectric Layer and Method for Manufacturing the Same.” The invention describes a layered solid element with an epitaxially grown ferroelectric layer made from crystalline lithium niobate-tantalate material. The layer has a specified orientation relative to the substrate and is grown from a buffer layer containing a lanthanide-based nickelate compound.

The layered structure may be used in thin-film bulk acoustic resonators and integrated electronic circuits, including radio-frequency filters. It may also support guided optical devices, such as integrated optical modulators.

Career Highlights

Bartasyte is associated with Université de Franche-Comté. Her patent highlights research into ferroelectric materials and layered structures designed for integration into electronic and optical technologies.

Collaborations

The supplied information names Sabina Kuprenaite and Vincent Astié as Bartasyte’s coworkers. Their connection to the patent or to specific projects is not further detailed in the provided data.

Conclusion

Ausrine Bartasyte’s patent work focuses on epitaxial ferroelectric layers and their potential use in acoustic, electronic, and optical devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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