Aizuwakamatsu, Japan

Atusi Sasaki

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atusi Sasaki. Retrieved from https://idiyas.com/inventor/atusi-sasaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 34(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Atusi Sasaki: Innovator in Semiconductor Technology

Introduction

Atusi Sasaki is a prominent inventor based in Aizuwakamatsu, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Sasaki holds a patent for a semiconductor device and a method of manufacturing the same. This invention involves a semiconductor device that comprises at least one bipolar transistor and at least one MIS FET integrated into a single semiconductor substrate. Each region of the bipolar transistor and the MIS FET is equipped with an electrode that shares the same conductivity type as the corresponding region, ensuring efficient ohmic contact with the surface.

Career Highlights

Atusi Sasaki is associated with Fujitsu Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient and integrated semiconductor devices.

Collaborations

Sasaki has collaborated with notable colleagues, including Yoshinobu Momma and Tsuneo Funatsu, who have also contributed to advancements in semiconductor technology.

Conclusion

Atusi Sasaki's innovative work in semiconductor devices showcases his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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