Atushi Komura

Title: The Innovative Contributions of Atushi Komura

Introduction

Atushi Komura is a notable inventor based in Obu, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on methods that enhance the fabrication of semiconductor devices.

Latest Patents

Atushi Komura holds a patent for a method of forming a sidewall on a semiconductor element. This innovative method fabricates a semiconductor device with a sidewall made from an insulation film at each side of a gate electrode portion. The process involves forming a polysilicon gate electrode on a gate oxide film in a predetermined region on an n.sup.- epitaxial layer. A CVD silicon oxide film is then formed over the polysilicon gate electrode material. The use of a magnetron enhanced reactive ion etching apparatus allows for precise etching of the CVD silicon oxide film, ensuring that it remains only at each side of the polysilicon gate electrode material, thus forming a sidewall. This method is crucial for improving the performance and reliability of semiconductor devices.

Career Highlights

Atushi Komura is associated with Nippondenso Co., Ltd., a company known for its advancements in automotive technology and electronics. His work has contributed to the development of innovative semiconductor solutions that are essential in modern electronic devices.

Collaborations

Throughout his career, Atushi has collaborated with notable colleagues such as Kenji Kondo and Akira Kuroyanagi. These collaborations have fostered an environment of innovation and have led to advancements in semiconductor technology.

Conclusion

Atushi Komura's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient and reliable semiconductor devices.