Atsushi Noma

Title: Atsushi Noma: Innovator in Semiconductor Technology

Introduction

Atsushi Noma is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and patents. His work has had a lasting impact on the development of memory devices.

Latest Patents

Atsushi Noma holds a patent for a semiconductor device that features a memory element with a source region and drain region, along with multiple assistance elements. This semiconductor device includes a memory cell situated on a semiconductor substrate. The memory cell comprises a memory element, a first assistance element, and a second assistance element. The memory element is designed with a source region and a drain region, as well as a selection gate and a floating gate arranged in series. The first assistance element contains a first impurity region and a first gate, while the second assistance element includes a second impurity region and a second gate. Notably, the first and second gates are electrically connected to the floating gate, enhancing the device's functionality.

Career Highlights

Throughout his career, Atsushi Noma has worked with prominent companies in the semiconductor industry. He has been associated with Tower Partners Semiconductor Co., Ltd. and Tower Semiconductor Ltd., where he has contributed to various projects and advancements in semiconductor technology.

Collaborations

Atsushi Noma has collaborated with esteemed colleagues, including Hiroshige Hirano and Hiroaki Kuriyama. These partnerships have fostered innovation and have been instrumental in the development of cutting-edge semiconductor solutions.

Conclusion

Atsushi Noma's contributions to semiconductor technology, particularly through his patent and collaborations, highlight his role as an influential inventor in the field. His work continues to inspire advancements in memory device technology.