Atsushi Nagashima

Title: Atsushi Nagashima: Innovator in Field Effect Transistors

Introduction

Atsushi Nagashima is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of electronics, particularly in the development of field effect transistors. His innovative work has led to the creation of a unique patent that enhances the performance of UHF gain controlling tuners.

Latest Patents

Nagashima holds a patent for a dual gate Schottky barrier gate GaAs FET. This invention features improved cross-modulation characteristics when utilized in UHF gain controlling tuners. The design allows for a drain to source saturation current of 40 mA or smaller. A key improvement in this FET is the length of a second gate, which is positioned between the first gate and the drain, measuring 1.5 µm or longer.

Career Highlights

Atsushi Nagashima is associated with Matsushita Electric Industrial Co., Ltd., a leading company in the electronics industry. His work at this organization has allowed him to focus on advancing technology in the field of semiconductors. His contributions have been recognized within the industry, showcasing his expertise and innovative spirit.

Collaborations

Nagashima has worked alongside talented colleagues such as Shutaro Nanbu and Gota Kano. Their collaborative efforts have contributed to the success of various projects and innovations within their field.

Conclusion

Atsushi Nagashima is a distinguished inventor whose work in field effect transistors has made a significant impact on electronics. His innovative designs and collaborations continue to influence the industry, paving the way for future advancements.