The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 1984
Filed:
Oct. 07, 1983
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
330278 ; 330277 ; 357 22 ;
Abstract
A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, having a value of 40 mA or smaller of a drain to source saturation current, the improvement of the FET is that length of a second gate which is disposed between a first gate and a drain is 1.5 .mu.m or longer.