Ibaraki, Japan

Atsushi Hukushima

This inventor holds 2 USPTO granted patents. Top assignee: Jx Nippon Mining Metals Corporation. Active years: 2011-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Hukushima. Retrieved from https://idiyas.com/inventor/atsushi-hukushima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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2 patents (USPTO):Explore Patents

Title: Innovations of Atsushi Hukushima in Sputtering Technology

Introduction

Atsushi Hukushima is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of sputtering technology, particularly in the manufacturing of tantalum sputtering targets. With a total of 2 patents to his name, his work has advanced the efficiency and quality of sputtering processes.

Latest Patents

Hukushima's latest patents include a tantalum sputtering target and a method of manufacturing the same. This invention provides a tantalum sputtering target that is produced by working a molten and cast tantalum ingot or billet through forging, annealing, and rolling. The resulting structure of the tantalum target features a non-recrystallized structure, which enhances its deposition speed and uniformity of film. This innovation minimizes arcings and particles, leading to excellent film-forming properties.

Another significant patent is related to a sputtering target manufactured by die forging. This invention is characterized by a specific relationship between the average crystal grain sizes, ensuring that the sputtering target exhibits superior characteristics. The method developed allows for the consistent manufacturing of high-quality sputtering targets by refining the forging and heat treatment processes.

Career Highlights

Atsushi Hukushima is currently employed at JX Nippon Mining & Metals Corporation, where he continues to innovate in the field of materials science. His work has been instrumental in enhancing the performance of sputtering targets, which are crucial in various applications, including semiconductor manufacturing.

Collaborations

Hukushima collaborates with Kunihiro Oda, a fellow innovator in the field. Their partnership has led to advancements in sputtering technology and improved manufacturing methods.

Conclusion

Atsushi Hukushima's contributions to sputtering technology through his patents have significantly impacted the industry. His innovative approaches to manufacturing tantalum sputtering targets demonstrate his commitment to advancing material science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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