The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Nov. 13, 2009
Applicant:
Atsushi Hukushima, Ibaraki, JP;
Inventor:
Atsushi Hukushima, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C21D 9/00 (2006.01); B21D 22/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A sputtering target manufactured by die forging is provided. It is characterized in that an average crystal grain size D at a portion where an average crystal grain size is the largest and an average crystal grain size d at a portion where an average crystal grain size is the smallest are related as 1.0<D/d<2.0. Further provided is a method capable of constantly manufacturing a sputtering target excellent in characteristics by improving and elaborating forging and heat treatment processes to render a crystal size fine and uniform, and a sputtering target excellent in quality obtained by this method.