This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Gifu, JP (2004)
- Ogaki, JP (2004)
Company Filing History:
2 out of 834,453 Years Active: 2004
Title: Atsumasa Doi: Innovator in Gas Cluster Technology
Introduction
Atsumasa Doi is a notable inventor based in Gifu, Japan. He has made significant contributions to the field of gas cluster technology, holding a total of 2 patents. His work focuses on innovative methods for forming gas clusters and thin films, which have important applications in various industries.
Latest Patents
Doi's latest patents include a "Method for forming gas cluster" and a "Method for forming thin film with a gas cluster ion beam." These inventions showcase his expertise in utilizing gas clusters for advanced material processing techniques.
Career Highlights
Throughout his career, Atsumasa Doi has demonstrated a commitment to innovation and research. His patents reflect a deep understanding of the complexities involved in gas cluster technology and its applications in thin film formation.
Collaborations
Doi has collaborated with notable colleagues such as Makoto Akizuki and Mitsuaki Harada. These partnerships have likely contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Atsumasa Doi is a distinguished inventor whose work in gas cluster technology has led to valuable patents and advancements in material science. His contributions continue to influence the field and inspire future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile