Yokohama Kanagawa, Japan

Asuka Kaneda


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Kanagawa, JP (2018)
  • Yokohama Kanagawa, JP (2019)

Company Filing History:


Years Active: 2018-2019

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2 patents (USPTO):

Title: Asuka Kaneda: Innovator in Memory Device Technology

Introduction

Asuka Kaneda is a prominent inventor based in Yokohama, Kanagawa, Japan. She has made significant contributions to the field of memory devices, holding a total of 2 patents. Her work focuses on enhancing the efficiency and functionality of memory cell transistors.

Latest Patents

Asuka Kaneda's latest patents include a memory device and a method for programming memory cell transistors. The memory device comprises a plurality of memory cell transistors, a word line electrically connected to the gates of these transistors, and a control circuit designed to perform programming of the memory cell transistors across various threshold voltage ranges. This innovative approach involves multiple loops, each containing a program operation and a program verification. The different threshold voltage ranges include a first range and a second range, which operates at a higher voltage. During the programming operation, the control circuit applies a program voltage to the word line, which increases with each subsequent loop. The amount of increase in the program voltage for the second threshold voltage range is determined based on the number of loops needed to complete programming for the first range.

Career Highlights

Asuka Kaneda is currently employed at Toshiba Memory Corporation, where she continues to develop cutting-edge memory technologies. Her work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Asuka collaborates with notable colleagues such as Koki Ueno and Yasuhiro Shiino, contributing to a dynamic team focused on innovation in memory technology.

Conclusion

Asuka Kaneda's contributions to memory device technology exemplify her dedication to innovation and excellence in her field. Her patents reflect a deep understanding of memory cell transistors and their programming methods, positioning her as a key figure in the advancement of memory technology.

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