Mesa, AZ, United States of America

Aslan Baghdadi


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1978-1980

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2 patents (USPTO):Explore Patents

Title: Innovations by Aslan Baghdadi: Transforming Semiconductor Technology

Introduction

Aslan Baghdadi is an innovative inventor based in Mesa, Arizona. With a profound understanding of semiconductor technology, he has made significant contributions to the field, especially in the development of processes that enhance the properties of polycrystalline silicon sheets.

Latest Patents

Aslan Baghdadi holds two patents that showcase his expertise and groundbreaking approach to semiconductor manufacturing. His first patent, titled "Self-seeding conversion of polycrystalline silicon sheets," describes a novel method for converting polycrystalline sheets into monocrystalline or macrocrystalline semiconductor sheets. This process involves creating a molten zone in a narrow region of the sheet, which allows for the solidification into large single crystals as the molten zone is moved across the sheet. This innovative technique eliminates the need for a seed crystal, thus simplifying the production of high-quality semiconductor materials.

His second patent, "Crossed grain growth," discloses a method for producing semiconductor sheets that can be directly utilized in solar cell production. This method establishes a molten region at the edge of the semiconductor sheet and moves it to create a path of elongated crystal grains, enhancing the material's overall efficiency and performance in solar applications.

Career Highlights

Aslan Baghdadi has been associated with Motorola Corporation, a prominent company known for its contributions to the technology sector. His work in semiconductor technology, particularly in the context of renewable energy and solar applications, has positioned him as a key figure in the ongoing advancements within the industry.

Collaborations

Throughout his career, Baghdadi has collaborated with notable colleagues, including Richard W. Gurtler and Ralph J. Ellis. Their teamwork has fostered a dynamic environment for innovation, enabling the development of cutting-edge technologies that push the boundaries of semiconductor applications.

Conclusion

Aslan Baghdadi's contributions to the field of semiconductor technology through his patents reflect a commitment to innovation and excellence. His pioneering methods have the potential to significantly impact the production of high-performance materials, particularly in the realm of renewable energy solutions. His work continues to inspire future advancements in technology and sustainable energy applications.

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