The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1980
Filed:
Apr. 07, 1977
Aslan Baghdadi, Mesa, AZ (US);
Richard W Gurtler, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A polycrystalline semiconductor sheet may be converted to a monocrystalline or macrocrystalline semiconductor sheet through use of a geometric restriction in the sheet. The process requires formation of a region of the sheet having a small width compared to the width of the remainder of the sheet. A molten zone is formed in the small width region of the sheet. At least a portion of the molten zone is allowed to solidify into a single crystal or crystals of large size of the semiconductor material coextensive with the small width of the region at the portion of the molten zone so solidified. The molten zone is then moved from the small width region of the sheet into the remainder of the sheet. The sheet is allowed to solidify successively as the molten zone passes along it. As a result, the macrocrystal formed in the narrow width region of the sheet propagates into the remainder of the sheet through which the molten zone passes. This process allows formation of high modified semiconductor material without requiring use of a seed crystal.