Ashwani K Sharma

Title: Innovations of Ashwani K Sharma

Introduction

Ashwani K Sharma is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of photodetectors, holding two patents that showcase his innovative approach to technology.

Latest Patents

One of his latest patents is the Silicon metal-semiconductor-metal photodetector. This invention involves silicon MSM photodiodes that are sensitive to radiation in the visible to near-infrared spectral range. The technology is produced by altering the absorption characteristics of crystalline silicon through ion implantation. This process creates a defected region below the surface of the silicon, with the highest concentration of defects at its base. This design effectively reduces the contribution of charge carriers formed below the defected layer. The charge carriers generated by radiation in the upper regions of the defected layer are quickly collected between biased Schottky barrier electrodes, forming a metal-semiconductor-metal structure for the photodiode.

Career Highlights

Ashwani K Sharma has worked with prominent organizations, including the United States of America as represented by the Department of Health and Sandia National Laboratories. His work in these institutions has contributed to advancements in technology and innovation.

Collaborations

Throughout his career, he has collaborated with esteemed colleagues such as Steven Roy Julien Brueck and David R Myers. These collaborations have further enhanced his contributions to the field.

Conclusion

Ashwani K Sharma's innovative work in photodetectors exemplifies the impact of his inventions on technology. His patents reflect a deep understanding of materials and their applications in modern science.