Ashay Anurag

Title: Ashay Anurag: Innovator in Silicon Dioxide Passivation

Introduction

Ashay Anurag is a notable inventor based in La Jolla, California. He has made significant contributions to the field of materials science, particularly in the area of silicon dioxide passivation.

Latest Patents

Anurag holds a patent titled "Passivation of Silicon Dioxide Defects for Atomic Layer Deposition." This inventive concept focuses on methods for passivating an oxide layer and selectively depositing various metal layers. The process involves exposing the oxide layer to a passivant that selectively binds to it, allowing for the growth of metal, metal nitride, metal oxide, or metal silicide layers.

Career Highlights

Anurag is affiliated with the University of California, where he continues to advance research in his field. His work has implications for improving the efficiency and effectiveness of atomic layer deposition techniques.

Collaborations

Some of his notable coworkers include Steven J Wolf and Michael Breeden, who contribute to the innovative environment at the University of California.

Conclusion

Ashay Anurag's work in passivating silicon dioxide defects represents a significant advancement in materials science. His contributions are paving the way for future innovations in atomic layer deposition technologies.