Okayama, Japan

Asahi Fujino

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Tokyo Institute of Technology, University of Tsukuba. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Asahi Fujino. Retrieved from https://idiyas.com/inventor/asahi-fujino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Asahi Fujino: Innovator in Two-Dimensional Materials

Introduction

Asahi Fujino is a prominent inventor based in Okayama, Japan. He has made significant contributions to the field of materials science, particularly in the development of two-dimensional compounds. His innovative work has led to the creation of a unique sheet containing two-dimensional hydrogen boride.

Latest Patents

Fujino holds a patent for a "Sheet containing two-dimensional hydrogen boride and production method for sheet containing two-dimensional boron compound." This invention features a two-dimensional network that consists of (HB)(n≥4), showcasing his expertise in advanced material synthesis.

Career Highlights

Throughout his career, Fujino has been associated with esteemed institutions such as the University of Tsukuba and the Tokyo Institute of Technology. His work at these universities has allowed him to explore and expand the boundaries of material science.

Collaborations

Fujino has collaborated with notable colleagues, including Takahiro Kondo and Junji Nakamura. These partnerships have fostered a rich environment for innovation and research in the field of two-dimensional materials.

Conclusion

Asahi Fujino's contributions to the field of two-dimensional materials are noteworthy, and his patent reflects his innovative spirit. His work continues to inspire advancements in material science and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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