Company Filing History:
Years Active: 2013
Title: Arunima Dasgupta: Innovator in SRAM Cell Performance Modeling
Introduction
Arunima Dasgupta is a notable inventor based in Essex Junction, Vermont, who has made significant contributions to the field of semiconductor technology. She is recognized for her innovative approach to modeling the worst-case performance of SRAM cells, which is crucial for enhancing the efficiency of memory devices.
Latest Patents
Dasgupta holds a patent titled "Model library implementation and methodology for worst case performance modeling for SRAM cells." This patent addresses the challenges of accurately simulating the worst-case performance of SRAM cells with reduced computational intensity. The methodology involves determining a process corner G for the SRAM cell, conducting Monte Carlo simulations, and generating a normal probability distribution to extrapolate the worst-case performance. This innovative approach allows for the creation of a library of SRM corner values, which can be utilized to validate SRAM cell performance effectively.
Career Highlights
Arunima Dasgupta is currently employed at GlobalFoundries Inc., where she applies her expertise in semiconductor technology. Her work focuses on improving the performance and reliability of SRAM cells, which are essential components in modern electronic devices.
Collaborations
Dasgupta collaborates with esteemed colleagues, including Vineet Wason and Kevin J Yang, to further advance research and development in the field of semiconductor technology.
Conclusion
Arunima Dasgupta's contributions to SRAM cell performance modeling exemplify her innovative spirit and dedication to advancing technology. Her work not only enhances the efficiency of memory devices but also sets a foundation for future advancements in the semiconductor industry.